| 摘要 |
PURPOSE:To reduce the collector area per stabilized resistor resulting in the improvement of breakdown strength by a method wherein, when manufacturing a high frequency transistor, the shape of an emitter region is constituted of a plurality of planar rectangular impurity regions provided in parallel at fixed intervals, and a plurality of emitter leadout electrodes are mounted and connected to a stabilized resistor. CONSTITUTION:An N type collector layer 1 is epitaxial-grown on an N<+> type semiconductor substrate, then thereon shallow P type base regions 2a and 2b divided by a deep P<+> type region 3 are diffusion-formed, and N<+> type emitter regions 4 are diffusion-formed on each region 2a and 2b into an approx. spinal form. In other words, the region 4 is formed into a form wherein a plurality of N<+> type regions with rectangular plane are provided in parallel at fixed intervals resulting in the structure wherein the centers thereof are joined by N<+> type regions perpendicular thereto into an integral body. Thus, the ratio of emitter peripheral length/emitter area is increased, and a plurality of emitter lead-out electrodes 9 are provided these perpendicular N<+> type regions, then connected to the stabilized resistor 10. In this manner, the area of the layer 1 necessary per resistor 10 is reduced. |
