| 摘要 |
PURPOSE:To prevent migration of water including impurity and obtain a semiconductor device having excellent characteristic by stacking an Si3N4 film on an SiO2 film at 500 deg.C or less and forming a thin protection film having the structure with an internal stress of 1X10<9>dyn/cm<2> or more as a compressive stress. CONSTITUTION:An SiO2 or PSG film 26b is provided on a field effect transistor (FET) and its internal stress is set to a compressive stress of 1X10<9>dyn/cm<2>. An Si3N4 film 26a is stacked and formed by the plasma CVD method at a temperature of 500 deg.C or less so that a gate electrode 24 does not dissolve and an internal stress of film 26a is set to about 8X10<9>dyn/cm<2>. According to this double structure, a tensile stress of sealing resin is eased, crack is hardly generated, migration of water containing impurity such as Na into elements on a Si substrate 20 can be prevented and element characteristic can also be improved. |
