| 摘要 |
PURPOSE:To increase the mobility of the carrier flowing through a thin layer and thus obtain a high speed FET, by forming the thin layer of single crystal, when forming source and drain regions on a semi-insulating substrate such as GaAs, then providing a semiconductor thin layer on the surface therebetween, and thus providing a gate electrode via a gate insulation layer thereon into an FET. CONSTITUTION:On the semi-insulating substrate 11 constituted of GaAs, etc., without using the semiconductor layer of normal polycrystal or amorphousness, a single crystal semiconductor thin film 12 with lattice constant different from that of the substrate 11 is epitaxial-grown. Next, an N<+> type source region 13 and a drain region 14 are diffusion-formed through this thin layer 12, and, on the thin layer 12 positioned between these regions, a gate electrode 18 is adhered via a gate insulation film 17. Thus constituted, a gate voltage is impressed between a source electrode 15 and a gate electrode 18, and the current flowing between the source electrode 15 and a drain electrode 16 is controlled by this voltage. In this manner, since the mobility of the carrier flowing through the thin layer 12 exceptionally increases, the FET is operated at a high speed. |
