| 摘要 |
PURPOSE:To reduce the source resistance when operated by a source earth resulting in the great improvement of a high frequency characteristic by a method wherein a V groove with the top end reaching the inside of a substrate is opened at the center of a source region constituting an FET, and a source electrode is adhered along the surface of this groove. CONSTITUTION:A P type layer 2 is epitaxial-grown on the P<+> type Si substrate 1 having (100) plane orientation, and thereon an N<+> type source region 3 and drain region 4 are diffusion-formed. Next, at the center of the region 3, the groove 5 with the top end going from the surface of the layer 2 into the surface of the substrate 1 is opened by an etching using KOH etchant, and accordingly the surface of the groove 5 is changed into a (111) plane. Thereafter, between a part serving as a gate positioned between regions 3 and 4, and the region 4, utilizing self-alignment, an N<-> type drift region 7 is formed by an ion implantation resulting in the constitution of an offset gate. Thereafter, while being made along the surface of the V groove, the source electrode 6 reaching the substrate 1 is adhered. |
