发明名称 SURFACE STRUCTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent missing or crack of semiconductor pellet during the manufacturing process by forming an SiO2 film up to the scribe line range of semiconductor substrate and overlapping a protection film in the form of staircase adjacent to the scribe line. CONSTITUTION:An SiO2 film is formed on an Si substrate 1 and an SiO2 film 9 is then formed thinner than a film 2 on the scribe line. Then, the Al wiring 4 is provided and protection films 5 are stacked like staircase. When scribing is carried out along the line 8, missing or crack at the periphery of pellet can be prevented. Moreover, short-circuit between inner lead 7 connected to a gold bump 6 and edge 81 of pellet can be prevented.
申请公布号 JPS58122737(A) 申请公布日期 1983.07.21
申请号 JP19820005540 申请日期 1982.01.18
申请人 DAINI SEIKOSHA KK 发明人 EHATA HISAO;KUHARA KENTAROU
分类号 H01L23/28;H01L21/304;H01L21/31;H01L21/60 主分类号 H01L23/28
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