发明名称 SEMICONDUCTOR IC DEVICE
摘要 PURPOSE:To enable the input level to be set to different values by a method wherein, when manufacturing the input circuit of an LSI by a master slice system, a plurality of MOS transistor sets with P channel type and N channel type are formed, and each transistor is made different in the channel width at 1:2:4. CONSTITUTION:With an output terminal 2 constituted of a metallic wiring band placed between, a power source terminal 6 and an earth terminal 7 using the same metallic wiring band are provided on the both sides thereof, and, between terminals 2 and 6, a plurality of P channel type MOS transistor regions 3-1-3-3 are formed. Between terminals 7 and 2, N channel type MOS transistors 4-1-4-3 are provided, and these are connected to the terminal 2 by metallic wiring regions 8-1-8-6 for connection. On the other hand, to the input terminal 1, a polycrystalline gate wiring is connected and connected to contact holes 5-1-5-6 of each transistor. In such a constitution, the channel width ratio of transistors is set 1:2:4, then a necessary transistor is selected, and accordingly different input levels are obtained.
申请公布号 JPS58122771(A) 申请公布日期 1983.07.21
申请号 JP19820004553 申请日期 1982.01.14
申请人 NIPPON DENKI KK 发明人 KOYADA HIROSHI
分类号 H01L21/82;H01L21/8238;H01L27/092;H01L27/118;H03K19/0175 主分类号 H01L21/82
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