| 摘要 |
PURPOSE:To obtain excellent luminous characteristics by implanting an impurity forming a conductivity type reverse to the conductivity type of semiconductors to the semiconductors laminated in the same conductivity type including active layers and shaping striped P-N junctions in each semiconductor laser. CONSTITUTION:An N-Al0.3Ga0.7As clad layer 102, an N-GaAs layer 103, clad- layer N-Al0.3Ga0.7As 104 and cap-layer N-GaAs 105 are formed onto the high resistance GaAs of a substrate 101. A diffusion mask is formed by using Si3N4, Zn is diffused, and diffusion sections 112, 113 are shaped through double diffusion. The regions 112, 113 function as P-type regions, and are employed as active layers, currents transversely flow through the layer 103, and light is emitted from a section 111. Respective electrodes 108, 107 are formed, and Au-Cr is used as the P type 108 and Au-Ge-Ni/Au as the N type 107. Accordingly, luminous efficiency is improved, and homogeneous output can be extracted with excellent reproducibility.
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