| 摘要 |
PURPOSE:To make the inverse directional rectifying junction between each layer perfectly non-rectifiable resulting in the enhancement of the power conversion efficiency of a device by a method wherein a plurality of power generation layers constituted of the amorphous semiconductor having potential barrier inside, with the barrier of each layer in forward direction, are laminated in the direction of light incidence, and microcrystal semiconductor layers are provided at the boundary parts between each power generation layer. CONSTITUTION:On a transparent insulation substrate 10 of glass, etc., the first clear electrode 11 constituted of In.Sn oxide, etc. is adhered, then thereon the first-the third power generation layers 12-14 constituted all of the amorphous semiconductor are laminated resulting in a deposition, and thereon the second Al electrode 15 is mounted. Thereat, the first power generation layer 12 is constituted of a P type SiC, an N type Si3N4 and an N type Si, then the second power generation layer 13 is constituted of a P type Si, an I type Si and an N type Si, and the third power generation layer 14 is constituted of a P type Si, an I type Si, Sn and an N type Si, Sn. Further, at the boundary parts between each power generation layer 12-14, microcrystallized semiconductor layers M1 and M2 are interposed. |
