| 摘要 |
PURPOSE:To control the gap length accurately, by forming a thin film eliminated afterward to a part being an operating gap of a magnetic substance wafer. CONSTITUTION:A resist film (1st thin film) 22 is coated on a surface 21 being a gap constituting plane of the magnetic substance wafer 20 and the 1st thin film 22' located at a part being the operating gap in future is left and the other parts are removed. The 2nd thin film having the thickness relating to the gap length of the operating gap, i.e. an SiO2 film 24 is attached on the surface 21 with the vapor deposition. Grooves forming track width are formed in the direction crossing with the film 22' on the surface 21, the 1st thin film 22' is removed to form one wafer. The other wafer is formed with molten glass insertion grooves 32, 33 and winding window grooves 34, both wafers are opposed for heat processing and molten glass is filled in space and track width control grooves being the operating gap. Thus, the gap length is controlled with good accuracy. |
