| 摘要 |
PURPOSE:To prevent short-circuit between wirings and obtain a microminiature high integration density device by forming metal wiring layer on a substrate through an insulating layer, forming a mask of insulating thin film and then selectively etching such metal layer. CONSTITUTION:Elements are formed by selectively providing a thermal oxide film 2 on a Si substrate and then PSG3 is precipitated. An Al layer 4 is stacked, a SiO2 is deposited in the thickness of about 1,000Angstrom and the SiO2 8 is etched by providing a resist mask 5'. The mask 5' is removed, a wiring layer 6 is formed through reactive ion etching of Al 4 with the SiO2 thin film 8 used as the mask and then the mask 8 is removed. A compound of Al and C, N2 is generated at the time of reactive ion etching but since the mask 8 is thin, the wall of compound does not grow as much as short-circuitting wirings 6 and accordingly gap between wiring layers 6 can be further miniaturized. When a resist film 9 is stacked on the SiO2 thin film 8 and the surface is flatened and then the SiO2 film 8 is etched by he mask of resist 5, a pattern conversion difference is eliminated and the wiring layer 6 can be obtained with excellent accuracy. |
