MEMORY CELL WITH A DIODE COMPRISING POLYCRYSTALLINE SILICON,申请号GB19790043741-传众专利搜索

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发明名称	MEMORY CELL WITH A DIODE COMPRISING POLYCRYSTALLINE SILICON
摘要
申请公布号	GB2038091(B)	申请公布日期	1983.07.20
申请号	GB19790043741	申请日期	1979.12.19
申请人	PHILIPS NV	发明人
分类号	G11C11/411;H01L21/822;H01L21/8229;H01L27/04;H01L27/102;(IPC1-7):H01L27/04	主分类号	G11C11/411
代理机构		代理人
主权项
地址

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