| 摘要 |
PURPOSE:To diffuse the P type impurity uniformly into the N type SiC substrate by forming an amorphous SiC layer containing the P type impurity onto the N type SiC substrate while thermally diffusing the P type impurity of the SiC layer into said substrate. CONSTITUTION:The N type SiC substrate 8 is placed onto a supporting base 2 while said substrate 8 is heated by a heater. SiH4 Gas, C2H4 gas and (CH3)3Al are each supplied into a reaction pipe 1 from first-third supply pipes 4-6, said gases supplied are plasma-decomposed by a high-frequency coil 7, and an amorphous SiC layer 9 containing Al is deposited onto said substrate 8. The substrate 8 is placed onto a placing section 14c while Si and Al powder are encased into a groove section 13c. When the temperature of a crucible 13 is elevated up to 1,800-2,000 deg.C by a heating coil 15, Al in the amorphous SiC layer 9 diffuses into the substrate 8, and a P-N junction surface 10 is formed. |
