| 摘要 |
PURPOSE:To remove deformation and damage by dispersing and forming metallic thin film layers at every small area to plural positions on the back of a semiconductor element and preventing the thermal strain of the semiconductor element due to the joining of a solder material onto a base. CONSTITUTION:With the semicoductor element 1 consisting of a silicon base body, the length of a side exceeds 5-6mm., and the dotted metallic thin-film layers 11, which have the small diameters of approximately 0.3mm. and are formed through metallizing, are dispersed, arranged and formed to a large number of positions on the back. The base 3 is heated at heating (200-300 deg.C) or more, the solder material 12 is placed onto the die pad section of an upper surface and melted, and the semiconductor element 1 is placed onto the solder material and pushed against it. The solder material 12 melted is joined with each metallic thin film layer 11 of the semiconductor element 1. The breaking strength of the solder material 12 is small because the diameters of the metallic thin film layers 11 are small as 0.3mm.. |
