发明名称 ALIGMENT OF MASK POSITION
摘要 PURPOSE:To reduce an error in position alignment by using a first alignment mark and a second alignment mark prepared of this mark for alignment of position of a mask. CONSTITUTION:By using a mask for forming a first marker, a first alignment mark 11 is formed on a substrate 41 whereon a PLZT thin film 44 is formed by sputtering. Next, a first layer pattern (waveguide) mask 12 and the mark 11 are aligned in position with each other, a resist 13 is exposed and developed by using the mask 12, and an aluminum pattern 11A is formed. Then, Ta2O5 24 being a material of a waveguide is sputtered, a waveguide pattern 24B is formed by removing the resist 13, and simultaneously a second alignment mark being transparent is formed by using the aluminum pattern 11A. Subsequently, direct position alignment is performed by means of the mark 11A to be a second marker and of a a third marker of a mask for forming a second layer pattern, and the second layer pattern to be an electrode is formed.
申请公布号 JPS62271427(A) 申请公布日期 1987.11.25
申请号 JP19860115268 申请日期 1986.05.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUKUDA TOMIYO;TONO HIDETAKA;YAMAZAKI OSAMU
分类号 G03F1/00;G03F1/38;G03F9/00;H01L21/027;H01L21/30;H01L21/67;H01L21/68 主分类号 G03F1/00
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