| 摘要 |
PURPOSE:To leave an insulating film for isolation to sections except an element forming region, and to improve the degree of integration of a minute element by forming the insulating film for isolation onto the whole surface of the surface of a semiconductor substrate, implanting ions in order to prevent inversion while using a film, which is formed onto the insulating film and patterned, as a shielding body and jointly using a lift-off method and etching. CONSTITUTION:A thermal oxide film 5 is formed onto the whole surface of the surface of the P type silicon substrate 4. A film 6 consisting of a metallic layer such as Al is formed. A photo-resist 7 is formed, and the surface is patterned through an optical exposure method and developed. The Al film is etched selectively by using reactive ion etching technique employing CCl4 and Cl2 as reactive gases while using a resist pattern as a mask. Boron ions are implanted by using ion implantation technique. Platinum films 8, 8' are formed by employing a sputtering evaporation method, and a film 6' and a resist 7' and platinum 8' on the film 6' are removed through lift-off. The thermal oxidef film 5 is etched selectively through a reactive in etching method using CF4 and H2 as reactive gases while employing residual platinum as a mask, and platinum 8 is removed by aqua regia. Accordingly, the isolation of the insulating film in which there happens no intrusion of the oxide film can be formed. |
