| 摘要 |
PURPOSE:To improve the yield of a semiconductor device by converting a thin silicon oxidized film into a glass layer without removing the thin silicon oxidized film and forming a diffused region in a semiconductor substrate through the glass layer, thereby preventing the improper part from occurring due to an underetching part. CONSTITUTION:After silicon wirings 4 and an electrode 5 are formed, an impurity is immediately diffused at a high temperature without removing the thin silicon oxidized film 5. A thin silicon oxidized film 3 is converted into a glass layer 11 by setting the temperature of diffusing the impurity to a temperature higher than 900 deg.C, the impurity is diffused through the layer 11 into a silicon semiconductor substrate 1, and a source region 6 and a drain region 7 are formed with the silicon gate 5 as a mask. A silicon oxidized film 8 is then formed, as shown in Fig. 2B, by thermally oxidized or vapor phase growing method on the overall surface without removing the layer 11, a contacting hole is further opened, and aluminum wirings 9 are then performed, thereby forming a transistor. |
