| 摘要 |
<p>The semiconductor laser has a buried double heterostructure and comprises a semiconductor substrate (1) of a first conductivity type and a multi-layer double heterostructure (2,3,4) including successively at least a first cladding semiconductor layer (2) of the first conductivity type, an active semiconductor layer (3) and a second cladding semiconductor layer (3) of a second conductivity type. The active semiconductor layer (3) has a narrower bandgap than those of said first and second cladding semiconductor layers (2 and 4, respectively). The multi-layer double heterostructure has a stripe geometry (7) channelled along both sides thereof to an extent that two channels reach said first cladding layer (2).
<??>On the multi-layer double heterostructure there is formed a current blocking layer (8,9) except for the top surface of said stripe geometry (7), for blocking a current flow therethrough.
<??>The voltage to forward biasing the laser is supplied via a pair of electrodes (11).
<??>The blocking layers effectively function to enhance the temperature and output characteristics of the semiconductor laser to an unprecedented degree while enhancing the reproducibility and yield of manufacture. </p> |
