| 摘要 |
PURPOSE:To regulate the thickness of the wafer while preventing the damage of the surface of the wafer extremely simply by previously forming a protective film utilizing negative type photo-resist onto the surface of the wafer. CONSTITUTION:The negative type photo-resist is applied uniformly onto the whole surface of the wafer, to which each section of an active region is formed and which requires the adjustment of thickness, and soft-baked (under a state such as one of 90 deg.C, twenty min and a nitrogen atmosphere). Said photo-resist is exposed extending over the whole surface through exposure technique. The photo-resist is solidified completely through post baking (under a state such as one of 160 deg.C, sixty min and a nitrogen atmosphere). The thickness of the wafer is regulated and processed about the wafer to which such treatment is completed. Accordingly, the negative type photo-resist film is formed previously onto the surface of the wafer at least side which must be bonded with a jig when the wafer, thickness thereof must be regulated and processed, is bonded with said jig in this invention, thus resulting in few damage to the surface of the wafer by solid matter in wax for bonding and the projection of the surface of the jig. |
