| 摘要 |
PURPOSE:To impart effective switching characteristics to a thin film transistor by applying an electric field to a semiconductor film or an insulating film, thereby performing a biasing process, and removing a produced impurity segregation layer. CONSTITUTION:A semiconductor film 3 is formed by a CVD or PVD method on an insulating substrate 1 and electrodes 2. A mask 4 for patterning the film 3 is formed, a source or a drain electrode 2 and a conductive resist 4 is used as an electrode, and a biasing process is performed. With the resist 4 as a mask, the film 3 is patterned, the resist 4 and an impurity segregation layer 4 are removed. After the above steps are performed, an insulating film 7 is formed. |
