| 摘要 |
A method of producing a layered structure, the method including forming a spacer layer on a substrate, forming a parting layer on the spacer layer, forming a first masking pattern on the parting layer the first masking pattern delineating field regions in a first metal layer, etching the spacer layer and the parting layer in accordance with the first masking pattern, depositing a first metal layer, depositing an etch barrier layer, dissolving the parting layer to remove the masking pattern and the first metal layer and etch barrier layer in the field regions, depositing a passivation layer on the spacer layer, depositing a dielectric layer on the passivation layer, forming a second masking pattern on the dielectric layer, exposing the etch barrier layer in accordance with the second masking pattern, depositing a second metal layer, forming a third masking pattern on the second metal layer and etching the second metal layer in accordance with the third masking pattern. |
