发明名称 Photoconductive member with alpha -Si(N) barrier layer
摘要 A photoconductive member comprise a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and carbon atoms as constituents. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, is characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and nitrogen atoms as constitution elements. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and carbon atoms as constitution element.
申请公布号 US4394426(A) 申请公布日期 1983.07.19
申请号 US19810304568 申请日期 1981.09.22
申请人 CANON KABUSHIKI KAISHA 发明人 SHIMIZU, ISAMU;SHIRAI, SHIGERU;INOUE, EIICHI
分类号 G03G5/02;G03G5/04;G03G5/08;G03G5/082;H01L31/08;(IPC1-7):G03G5/08;G03G5/14 主分类号 G03G5/02
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