WERKWIJZE VOOR HET MAKEN VAN EEN VASTE STOF-LEGERING.

摘要

A reactive plasma is formed between at least one solid phase material target (44) having one or more elements (Si) to be incorporated in the deposited alloy body and a substrate (28) spaced therefrom. The reactive plasma is formed from a gas including at least fluorine or a fluorine containing compound which etches the element(s) from the target which react with the fluorine and are deposited on the substrate with the fluorine. Other structural, compensating or altering elements can be added during the deposition, either simultaneously or sequentially. The deposition rate can be controlled by the introduction of oxygen into the plasma and removal rate of the element(s) can be controlled by the introduction of hydrogen. The deposition rate can be further controlled by varying the bias on the target. The deposits can be used as doped semi conductors for solar cells, photoelectric diodes and photocopying materials.