| 摘要 |
PURPOSE:To enable to obtain nearly uniform vapor phase growth thickness extending over the whole surfaces of semiconductor wafers by a method wherein the shape of the bottom plane of the susceptor is formed in the shape similar to or the same with the shape of the bottom plane of a reaction vessel. CONSTITUTION:The upper part of the susceptor 4 is formed as the pyramidal part constituting the wafer mounting faces 4a, while the shape of the bottom plane thereof is formed in the circular shape similar to or the same with the shape of the bottom of the reaction vessel 3. Accordingly when the susceptor 4 thereof is accommodated in the reaction vessel 3, a gap between the outside circumferential face of the susceptor bottom part and the inside circumferential wall face of the bottom part of the vessel 3 become to the same extending over the whole circumference, and as a result, because the sectional area of an efflux port of a gas current course in the vertical direction along the outside surface of the susceptor becomes to the same extending over the whole circumference, the gas flow rate along the outside surface of the susceptor can be made uniform extending over the whole surface. |
