| 摘要 |
PURPOSE:To eliminate the defect on the glass sealed part so that the glass sealed part will be tightly adhered to the glass as, and to heighten the reliability of the diode of the titled semiconductor device by a method wherein, in the leadless diode electrode which is assembled by performing a nail-driving work and molding work on the electrode having a small diameter part and a large diameter part, a copper oxide film is formed on the copper layer located on the surface of the electrode after a molding work has been performed. CONSTITUTION:The electrode 2 is formed by performing a nail-driving work on the copper-covered Fe-Ni strand which was drawn to 0.1-1.5mm.phi, the electrode 2 whereon an Ag pellet 10 will be pressure-bonded on the end face is placed on a belt 12 and carried to a heating furnace 13. If the electrode is quenched in a water cooling vessel 14 at the water temperature of 40 deg.C or below after heating at 950 deg.C or below, the copper surface of the electrode of any shape can be heated uniformly, and the copper oxide layer having fixed film thickness can be obtained by performing a water cooling method. |
