| 摘要 |
<p>PURPOSE:To obtain the highly reliable resin sealed semiconductor device by a method wherein the sealing is performed using an epoxy resin composition having an excellent dampproof property and high temperature electric characterstics. CONSTITUTION:The semiconductor device is sealed using the hardening materal of epoxy resin compositions having novolak type epoxy resin of 170-300 epoxy equivalent (a), novolak type phenol resin, (b) and phosphine complex of boron trihalogenide (c). As the epoxy resin to be used for said sealing, novolak type epoxy resin of 170-300 epoxy equivalent such as phenol novolak type epoxy resin, cresol novolak type epoxy resin, halogenide phenol novolak type epoxy resin and the like can be used. With regard to the cmpounding ratio of the e poxy resin and a hardener, the ratio within the range of 0.5-1.5 of the number of the phenolic hydroxyl group of the novolak type phenol resin and the number of epoxy group of the epoxy resin can be used.</p> |
