| 摘要 |
PURPOSE:To carry out the formation of a film in good efficiency at a high film growing speed, by a method wherein a protective gas supply port is provided in parallel with the outside of a reaction gas supply port and control parts for controlling the outflow direction of a gas are provided to respective end parts thereof to prevent the adhesion of the gas to an ultraviolet ray transparent window. CONSTITUTION:A reaction gas comprising a silane gas is supplied into a photochemical reaction type vapor deposition tank 1 from a reaction gas supply pipe 3 and a protective gas comprising an argon gas is supplied thereinto from a protective gas supply pipe 9 by sucking a vacuum pump 7. In this state, the reaction gas receives suction force due to the vacuum pump 7 to be flowed along the surface of a vapor deposition substrate 2 in a laminar stream and the protective gas is flowed along the outside of the reaction gas layer. Therefore, the reaction gas is irradiated when passed above the substrate 2 and, because ultraviolet rays from an ultraviolet lamp 5 are irradiated well without receiving disturbance due to gas diffusion, an activated atom can be adhered and deposited on the substrate 2 at a high film growing speed. |
