| 摘要 |
PURPOSE:To reduce floating capacity improving integration by a method wherein SiO2 film is provided on the outer surface of a laminated capacitor to provide electrode, conductor, resistor and the like on the SiO2 film. CONSTITUTION:A high dielectric substrate capacitor is formed by conventional procedures. Then a substrate 1 is sintered at 1,380 deg.C and the outer surface is coated with SiO2 thin film 7 by means of vacuum evaporation, sputtering or CVD process utilizing the substrate 1 as a supporter. An external electrode 6, end electrode 4, resistor 5 and the like are printed and baked on the thin film 7 to complete a thick film circuit. In this constitution, the floating capacity between electrodes may be reduced making signal transmission excellent and improving integration since SiO2 thin film with low dielectric constant constantly lies between the external electrode and high dielectric material. |
