发明名称 SEMICONDUCTOR PRESSURE DETECTOR APPARATUS WITH ZERO-POINT TEMPERATURE COMPENSATION
摘要 A semiconductor pressure detector apparatus has a strain electric signal conversion bridge which is composed of four semiconductor strain gauge, and an amplifier which serves to hold, at a predetermined value, the sum of currents flowing through the bridge. The midpoints of two arms constituting the bridge are respectively connected to the noninverting inputs of two negative feedback amplifiers. Outputs from the two negative feedback amplifiers are applied to a differential amplifier.
申请公布号 KR830001352(A) 申请公布日期 1983.07.14
申请号 KR19800000658 申请日期 1980.02.19
申请人 HITACHI LTD. 发明人 SATO HIDEO;KAWAKAMI KANJI;NISHIHARA MOTOHISA
分类号 G01B7/16;(IPC1-7):G01B7/16 主分类号 G01B7/16
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