| 摘要 |
PURPOSE:To obtain an element with high light emitting efficiency by a method wherein, in a double hetero junction structural light emitting element constituted of an InP-containing InGaAs semiconductor, between a clad layer and an active layer wherein a P type impurity is doped, a buffer layer with an energy gap the same as that of the clad layer and P impurity density lower than that of the clad layer is inserted. CONSTITUTION:On an N type InP substrate 1, a non-doped In0.74Ga0.24As0.56 P0.44 active layer 2, a P type InP buffer layer 3, a P type InP clad layer 4, a P type In0.84Ga0.16As0.36P0.64 electrode forming layer 5, and a current stricture layer 6 constituted of an SiO2 insulation film are grown by laminating, thus the layer 6 is opened window, and a P side electrode 7 contacted on the layer 5, and a fixed shaped N side electrode 8 on the back surface of the substrate 1 are mounted. In this constitution, the Zn impurity density of the clad layer 4 is set at 1X10<18>cm<-3>, the energy gap of the buffer layer 3 held between it and the active layer 2 is formed the same as that of the layer 4, but only the density is set at 2X10<17>cm<-3> which is lower than that of the layer 4. |
