| 摘要 |
PURPOSE:To obtain a diode array of a simplified structure by a method wherein a PIN junction made of amorphous or semiamorphous semiconductor is formed on an electrode/wiring in a substrate, interlayer insulating films are selectively formed, and an upper electrode/wiring is installed. CONSTITUTION:An Ni electrode/wiring 2 is printed on a glass substrate 1 and interlayer insulating materials 14, 15 are provided and then the entire surface is covered with an amorphous semiconductor lamonation 10 (P layer 3, I layer 4, N layer 5). Si, Ge, SixC1-x, or SixGe1-x will be used as amorphous semiconductor, whereinto H or halogen of 0.1-20mol% is introduced to neutralize the recombination center for the adquisition of a material of specified electroconductivity. An electrode 6 is printed on the top surface. The device being thus constructed, a diode 7, OFF-state diode region 9, and isolating region 8 made of amorphous semiconductor are formed, and a matrix is organized in the region 9. Lead-out electrodes 18, 19 are provided, a coating 29 is applied of epoxy resin, for the completion of the device. A diode array with a simplified structure is thus built by a method wherein no priecise mask alignment is required. |
