发明名称 FORMATION OF PATTERN
摘要 PURPOSE:To perform fine working with high accuracy by irradiating ionizing radiations to a polymer film consisting of 4-alkyl 3,5,8-trioxyabicylo[2,2,2] octo-1-y1-methoxy methyl styrene. CONSTITUTION:Ionizing radiations such as X-rays, electron rays or gamma rays are irradiated to a radiation sensitive polymer film consisting of a polymer contg. the 4-alkyl 3,5,8-trioxabicyclo[2,2,2]octo-1-y1-methoxy methyl styrene expressed by the formulaI(wherein R denotes a lower alkyl group) as a constituting unit, whereby patterns are formed. The sensitivity to ionizing radiations increases with an increase in the mol.wt. of the polymer and more preferable mol.wts. are 10,000-1,000,000. This method permits fine working with high accuracy and is suited for dry etching stages.
申请公布号 JPS58117538(A) 申请公布日期 1983.07.13
申请号 JP19820000727 申请日期 1982.01.06
申请人 NIPPON DENKI KK 发明人 TANIGAKI KATSUMI;OONISHI YOSHITAKE
分类号 G03C5/00;C08F8/00;G03F7/004;G03F7/038;H01L21/027 主分类号 G03C5/00
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