| 摘要 |
PURPOSE:To obtain a titled device which provides uniform irradiation wherein a neutral beam is removed, by the simple constitution wherein DC bias for deflection of an ion beam and scanning voltage are superposed and applied on parallel plate electrodes provided near the curving part of an ion beam introducing pipe. CONSTITUTION:Parallel flat plate electrodes 42a, 42b are disposed just before the curving part of an ion beam introducing pipe 41 which is slightly curved in the deflecting direction of an ion beam 43 of an ion implanting device, and DC bias and scanning voltage are superposed and applied on said electrodes to deflect the beam 43 and the allow a neutral beam 44 to advance rectilinear, thereby removing the same; at the same time, the beam 43 is scanned in a horizontal direction. Further, the beam is scanned in a vertical direction by similar parallel flat electrodes (not shown), whereby the uniform ion beam is irradiated to desired area. The use of triangular wave voltage preferable as the scanning voltage, and the output from a triangular wave generator 51 is superposed on the DC bias for deflection from a DC power source 55 with a boosting transformer 52, and is then applied on the electrodes 42a, 42b. |
