发明名称 |
Triple diffused short channel device structure. |
摘要 |
A short channel metal oxide semiconductor transistor device is processed without undesirable short channel effects, such as VT falloff and with a reasonable source-drain operating voltage support. In a substrate lightly doped with a P-type conductivity material and source and drain region heavily doped with an N-type conductivity material, two lightly doped N- regions are disposed between the edge of the gate and the source and drain regions. A channel region is more heavily doped with P-type material than the substrate. Two regions extend from opposite sides of the channel region to an area generally below the two N- regions and above the substrate, which regions are more heavily doped than the channel regions.
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申请公布号 |
EP0083447(A2) |
申请公布日期 |
1983.07.13 |
申请号 |
EP19820112060 |
申请日期 |
1982.12.28 |
申请人 |
MOSTEK CORPORATION |
发明人 |
HAN, YU-PIN;CHAN, TSIU CHIU |
分类号 |
H01L21/266;H01L21/336;H01L29/10;H01L29/78;(IPC1-7):01L29/08;01L29/88;01L21/265;01L29/10 |
主分类号 |
H01L21/266 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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