| 摘要 |
PURPOSE:To eliminate a neutral beam with simple constitution and to irradiate an ion beam uniformly, by regulating DC bias for deflection of an ion beam and scanning voltage in phase, superposing both and applying the superposed voltage upon electrodes for scanning introduced into an ion beam introducing pipe. CONSTITUTION:Electrodes 42a, 42b for horizontal scanning are disposed just before the curving part of an ion beam introducing pipe 41 which is curved slightly in the deflecting direction of ion beam 43. DC bias for deflecting the beam 43 and for removing a neutral beam 44 by allowing said beam to advance rectilinear and scanning voltage are superposed and are applied on said electrodes. In this stage, the magnitude of the DC bias is so regulated that the beam 43 is deflected according to the degree of curving of the pipe 41 and is made incident to the center of an object to be irradiated when the above-mentioned scanning voltage is zero. With such constitution, the uniform ion irradiation free from the influence of the netural beam is obtained, and when the above- described method is adapted to the irradiation of semiconductor wafers, the uniform surface resistance is formed. |
