| 摘要 |
PURPOSE:To improve the collector efficiency by forming a lateral type bipolar transistor by utilizing a single crystal layer in which polycrystalline silicon is converted into single crystal by emitting a laser light. CONSTITUTION:Silicon is selectively oxidized on a P type silicon single crystal substrate 1, thereby forming a dioxidized silicon layer 2. Then, a polycrystalline silicon layer is formed by a chemical gas phase growing method on the overall surface, the polycrystalline silicon is converted into single crystal by emitting a laser light, thereby forming a silicon single crystal layer 3. This layer 3 is of P type by containing P type impurity in the polycrystal. Then, an N type impurity ions are implanted or thermally diffused in the part on the dioxidized silicon layer of the layer 3 and in the part on the substrate in a window, thereby forming an N type emitter region 4 and a collector region 5. |
