| 摘要 |
PURPOSE:To prevent separation of single crystal silicon film by forming the polycrystalline silicon film on the silicon oxide thicker than the film on the single crystal silicon and then singlecrystallizing it by irradiating a high energy beam thereto. CONSTITUTION:After forming a silicon dioxide insulating film 12 and a polycrystalline silicon film 13 on a single-crystal silicon substrate 11, a polycrystalline silicon film 14 is grown thereon at the entire part. Thereafter, a silicon nitride film 15 and a phosphor silicate glass film 16 are grown thereover and the polycrystalline silicon films 13, 14 are converted to the singlecrystal silicon film 17 by irradiating a high energy beam. Then, the films 15, 16 are removed. As explained above, since a thick polycrystalline silicon film is formed on the silicon dioxide film, an excessive annealing can be prevented and separation of single crystal silicon film can be prevented even when the thermal conductivity of silicon dioxide is low. |
