| 摘要 |
PURPOSE:To realize a vapor growth film having the same thickness and homogeneous quality by providing at least a pair of electrodes with deviation of a limited angle within plurality of parallel planes which are parallel to the substrate to be depositted. CONSTITUTION:A gas guided from a gas introducing valve 1 generates grow discharge with a voltage applied to the anode electrodes 7, 8 and cathode electrodes 9, 10, and then decomposed and depositted on the substrate on a substrate holder 4 heated by a heater 6. The electrodes 7, 9 are provided in the plane different from that where electrodes 8, 10 are provided with deflection of a limited angle. A number of electrodes and a number of stages can be increased like 3-stage and 2-pair, 2-stage and 3-pair... In case an amorphous silicon is depositted with external diameter of 150mm., lateral electrode interval of 30mm. and vertical electrode interval of 50mm. of the deposition vessel 20, a film in the same thickness and homogeneous quality can be obtained. |
