| 摘要 |
PURPOSE:To stabilize emitting light intensity vs. current characteristic and to enable to form both side surfaces being flattened of a common substrate by forming a light emitting surface formed on the substrate vertically to the substrate and forming in acute angle the photodetecting surface to the substrate oppositely to the light emitting surface. CONSTITUTION:A semiconductor substrate 1 having (100) crystalline surface is empolyed, a buffer layer, an active layer and a clad layer are sequentially grown on the substrate 1, a groove 5 is formed, the light emitting surface 22 of a light emitting element 6 is formed vertically to the striped electrode 9, and vertically to the substrate 1. Then, the photodetecting surface 12 of the photodetector 7 is formed so that the edge becomes (01-1) crystalline axial orientation, is etched via a mask having an edge parallel to the direction and a photodetecting surface 12 made of (111)A surface is formed with theta which is the acute angle of (111) A surface. |
