发明名称 |
SINGLE POLYCRYSTALLINE SILICON MEMORY CELL |
摘要 |
<p>SINGLE POLYCRYSTALLINE SILICON MEMORY CELL A single polycrystalline silicon configuration for a memory cell in a static MOS RAM and a method of fabricating the same are described. Three conductivity regions are utilized to form each memory cell. A first conductivity region is formed in the substrate to create a buried ground line and sources and drains of transistors. A second conductivity region is formed within an insulation layer and above the first-conductivity region to create a word line, gate regions of the transistors, load resistors, and a power supply line. The power supply line is oriented directly above and parallel to the ground line. A third conductivity region is formed on the surface of the insulation layer to create data lines. The number of process steps and the size of the memory cell are reduced by this configuration.</p> |
申请公布号 |
CA1149950(A) |
申请公布日期 |
1983.07.12 |
申请号 |
CA19810373152 |
申请日期 |
1981.03.17 |
申请人 |
INMOS CORPORATION, 2860 S. CIRCLE DR., COLORADO SPRINGS, COLORADO |
发明人 |
SUD, RAHUL;HARDEE, KIM C. |
分类号 |
G11C11/412;H01L21/822;H01L21/8244;H01L23/522;H01L27/04;H01L27/06;H01L27/11;H01L29/78;(IPC1-7):H01L23/48;H01L29/54;H01L29/46 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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