| 摘要 |
A system for supporting wafers (18) on a gas cushion within the vacuum chamber (12) of a plasma etcher (10). An etchant gas is introduced into the vacuum chamber, and a second gas at a volume flow rate much lower than the volume flow rate of the etchant gas is directed to orifices formed in a wafer-receiving surface of an electrode (16) to define the gas cushion. In accordance with one aspect of the invention, the second gas is an inert gas, and in accordance with another aspect of the invention, the second gas is a reactant gas which is also directed into the vacuum chamber to serve as a reactant gas in conjunction with the first reactant gas.
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