| 摘要 |
PURPOSE:To prevent an undesired substance from diffusing in a single crystal silicon layer of a semiconductor device of stereoscopic structure by burying via holes formed in an insulating layer with a conductive material having a coating for preventing the containing substance from external diffusing. CONSTITUTION:A mesa unit is formed by patterning the second layer single crystal silicon layer 6. A thin dioxidized silicon insulating film is formed by a thermal oxidation method, and a polycrystalline silicon film is then formed by a chemical vapor phase accumulating method. This is patterned by a photolithography, thereby forming a silicon gate electrode 8. With the electrode as a mask a gate insulating film 9 is formed. Simultaneously, a dioxidized silicon film 7 is removed, thereby exposing the surface of a polycrystalline silicon 5. An n type impurity is implanted by an ion implantation method, thereby forming n<+> type regions 10, 11 to become source and drain regions, respectively. Then, metal electrodes 12, 13 made, for example, of aluminum are formed by an ordinary method. |
