| 摘要 |
PURPOSE:To prevent a latchup phenomenon from occurring by forming a reverse conductive type well region on the surface layer of the partial region of a semiconductor substrate and Schottky contacting a drain with the surfaces of the substrate and well region respectively. CONSTITUTION:The surface of a silicon substrate 11 is oxidized as a field insulating film 13, a V-shaped groove is formed at the intermediate, and an insulating isolation region 14 is formed therein. Then, a dioxidized silicon film 15 is formed, a window is opened, ions are implanted, thereby sequentially forming an n type well 17, an n<+> type region 19 and a p<+> type region 21. Subsequently, a polycrystalline silicon film 23 is formed, and is partly oxidized to convert it into a dioxidized silicon layer 23', thereby forming a gate. Thereafter, ground electrode wirings 24, power source electrode wirings 25 and output electrode wirings 26 are formed, thereby completing a Schottky drain type complementary MOS semiconductor device. |
