Method for erasing data of a non-volatile semiconductor memory integrated circuit

摘要

A non-volatile semiconductor integrated circuit has floating poly-silicon gates on the channel regions of memory cells. The information electronically stored in said floating gates is erased by the irradiation of an X-ray with predetermined amount. The writing step prior to X-ray irradiation causes the uniform erase of entire memory cells. The circuits other than memory cells are protected by a shielding coating against the X-ray irradiation.