| 摘要 |
PURPOSE:To obtain a better single crystal semiconductor region keeping the crystal nature of substrate by forming non single crystal material film after forming concaved area on an insulating substrate formed on a substrate and by singlecrystallizing it through irradiation of thermal energy beam. CONSTITUTION:A non single crystal material film 3 is grown on the concaved area obtained by forming an insulating substrate 2 on a substrate 1 and then removing it selectively. Thereafter, a cap layer 4 is formed and annealing is carried out through irradiation of energy beam. Thereby, the non single crystal material film 3 which is directly in contact with the substrate 1 in the concaved area is singlecrystallized while regular arrangement of atoms of substrate crystal is kept. Moreover, the melted material is all pulled to the concaved area filling there during crystallization. Therefore, when the cap layer 4 is removed, a better single crystal layer 6 can be obtained. |
