| 摘要 |
PURPOSE:To accurately compensate a change in the transferred pattern by a design method wherein the light transmitting region/non-transmitting region interface is shifted toward the light transmitting region depending on the kind of photo regist, developing condtion and the minimum size of pattern. CONSTITUTION:There exists a relationship between a shift distance (d) of the interface and an exposure time as shown in the figure. (d) denotes a shift distance on a photo regist pattern caused by development. In case of using a negative type photo regist made of cyclized rubber, (d) becomes 0.2mum under such conditions as a fim thickness of 0.6mum, use of 500 W halogen lamp and development of 1 minute after irradiation time of 30sec. With irradiation time being extended after that, the value of (d) is increased gradually. Thus, it becomes possible for a photo mask pattern for contact printing to have the desired size and shape on the photo regist film by forming the light transmitting/non-transmitting interface in a position shifted toward the light transmitting side by 0.2- 0.3mum. |
