| 摘要 |
PURPOSE:To eliminate the need for a mechanical shutter mechanism by forming photoelectric converting elements and MOSFET switching elements in one body, and providing the photoelectric converting elements with an electric shutter function. CONSTITUTION:On a semiconductor substrate 2, MOS.FET type switching elements S11-Smn and T1-Tn are arrayed in a matrix, and a photoelectric conversion layer 11 is formed on the elements. The photoelectric conversion layer 11 is connected to the switching elements S11-Smn in series to form photoelectric converting elements D11-Dmn. Further, the switching elements are turned on and off selectively by scanning circuits 13 and 14. On the photoelectric conversion layer 11, a transparent electrode 12 is formed and a pulse voltage source 18 having the 1st and the 2nd levels is connected to the electrode. Charges obtained in the photoelectric conversion layer 11 are applied to the switching elements when the pulse voltage source 18 attains the 2nd level to obtain shutter operation. |
