| 摘要 |
PURPOSE:To obtain a single crystal region with a constant crystal axis in a window by a method wherein a thick insulation film is produced on a single crystal Si substrate, a fixed window is opened, a thin insulation film is adhered therein, then a small hole is opened, a polycrystalline Si film is deposited over the entire surface, then the Si film is fused by a laser irradiation and poured into the window, and accordingly it is single crystallized. CONSTITUTION:On the single crystal Si substrate 11, a thick insulation film 12 constituted of SiO2 or Si3N4 is produced by a CVD method, etc. and photo etched, thus many windows 13 are selectively opened, and thereafter a thin insulation film 14 is adhered on the bottom surface wherein the substrate 11 is exposed. Next, a small window is opened at the center of the film 14, the surface of the substrate 11 is exposed again thereto, and in this state a polycrystalline Si film 16 in an amount enough to fill the window 13 is deposited over the entire surface. Thereafter, the substrate 11 is heated to approx. 500 deg.C, then an Ar laser light is irradiated onto the film 16 while being scanned, and thus the film 16 is fused and poured into the window 13. Thus, with the substrate 11 exposed in the window 15 as th center, all the polycrystalline Si poured into the window 13 are formed into single crystal Si layers 17A-17C. |
