SEMICONDUCTOR TETRODE

摘要

Process and embodiment for production of a semiconductor tetrode. The essence of the process in accordance with the invention lies in that double diffusion or implantation is made into a semiconductor substrate to ensure p-n-p or n-p-n bipolar transistor structure along the surface which contains emitter, base and collector. After the creation of this semiconductor structure an isolation layer and an extra electrode are made over the base. After the above steps contact windows are opened over the emitter, base and collector and leads are provided to them and to the extra electrode. The embodiment in connection with the invention contains emitter, base and collector layer in a semiconductor substrate and an isolation layer on it. It contains further an extra electrode over the base on the isolation layer and the emitter base, collector and the extra electrode are connected to leads. The semiconductor tetrode in connection with the invention is essentially a bipolar transistor supplied with an extra controlling electrode which enables continuous regulation of the main electronic parameters of bipolar transistors and makes possible the correction of parameter divergence inevitably resulting from the technology. The tetrode in connection with the invention is particularly useful in creating special amplifiers, in simplifying circuits and in creating devices with input resistance similar to MOS transistors and with output resistance and saturation voltage similar to bipolar transistors.