| 摘要 |
PURPOSE:To obtain an FET which operates as designed by forming an insulating film on a semi-insulating III-V Group semiconductor substrate or on the part f an n type layer in a substrate, covering it with an n<+> type layer, opening a hole at the layer, removing the insulating film, and attaching a Schottky junction metal onto the exposed layer. CONSTITUTION:A CVD SiO2 3 is formed in a strip shape on an n type epitaxial layer 2 on a semi-insulating GaAs substrate 1, is covered with an n<+> type epitaxial layer 4, AuGe/Ni electrodes 5 are deposited on both sides of the film 3, and are annealed at 400 deg.C. Then, a resist mask opened with a window narrower than the layer is formed on the layer 3, and the layer 4 and the film 3 are sequentially etched and removed. Al 7 is deposited on the exposed layer 2, the resist 6 and the aluminum 7 on the resist are removed, thereby completing an FET. According to this configuration, the etching residue of the layer 4 or the excess etching of the layer 2 of the problems in the conventional method can be completely prevented, the layer 4 for reducing a series resistance can be formed with good reproducibility, and an FET which operates as designed can be obtained. |
