发明名称 |
PHOTO- AND ELECTRON RESIST |
摘要 |
The photo- and electron resist contains a light-sensitive compound, a film-forming compound, a sensitizer, an organic solvent, an additive which forms a donor-acceptor complex with said compounds and reaction products thereof, which complex quenches the luminescence and improves the stability of the resist. The photo- and electron resist finds application in microelectronics, optics, printing arts, precise mechanical engineering, where structures of semiconductor devices and solid-state circuit are fabricated through the use of the resists. |
申请公布号 |
WO8302339(A1) |
申请公布日期 |
1983.07.07 |
申请号 |
WO1981SU00078 |
申请日期 |
1981.12.21 |
申请人 |
INSTITUT KHIMII AKADEMII NAUK SSSR |
发明人 |
MOLODNYAKOV, SERGEY, PETROVICH;FEDOROV, YURY, IVANOVICH;KUZNETSOV, VITALY, ALEKSEEVICH;EGOROCHKIN, ALEKSEY, NIKOLAEVICH;BIRYUKOVA, TAMARA, GRIGOREVNA;RAZUVAEV, GRIGORY, ALEKSEEVICH |
分类号 |
G03C1/72;G03F7/038;G03F7/09;H01L21/30;(IPC1-7):03C1/68 |
主分类号 |
G03C1/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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