发明名称 PHOTO- AND ELECTRON RESIST
摘要 The photo- and electron resist contains a light-sensitive compound, a film-forming compound, a sensitizer, an organic solvent, an additive which forms a donor-acceptor complex with said compounds and reaction products thereof, which complex quenches the luminescence and improves the stability of the resist. The photo- and electron resist finds application in microelectronics, optics, printing arts, precise mechanical engineering, where structures of semiconductor devices and solid-state circuit are fabricated through the use of the resists.
申请公布号 WO8302339(A1) 申请公布日期 1983.07.07
申请号 WO1981SU00078 申请日期 1981.12.21
申请人 INSTITUT KHIMII AKADEMII NAUK SSSR 发明人 MOLODNYAKOV, SERGEY, PETROVICH;FEDOROV, YURY, IVANOVICH;KUZNETSOV, VITALY, ALEKSEEVICH;EGOROCHKIN, ALEKSEY, NIKOLAEVICH;BIRYUKOVA, TAMARA, GRIGOREVNA;RAZUVAEV, GRIGORY, ALEKSEEVICH
分类号 G03C1/72;G03F7/038;G03F7/09;H01L21/30;(IPC1-7):03C1/68 主分类号 G03C1/72
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